The Electrical Field Enhancement of Corner Effects on Thin-Film Transistor Nonvolatile Memories

碩士 === 國立交通大學 === 電子物理系所 === 99 === For the first time, we propose a special structure to enhance the characteristic of TFT-SONOS memory devices. The memory process is not only simple but also compatible with 3D circuit integration. In this thesis, we investigate the effect of corners along channel...

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Bibliographic Details
Main Authors: Lin, Mic-Chen, 林岷臻
Other Authors: Chao, Tien-Sheng
Format: Others
Language:en_US
Published: 2011
Online Access:http://ndltd.ncl.edu.tw/handle/41338917259055392516