Schottky barrier photodetector on n-type freestanding GaN substrates.
碩士 === 國立交通大學 === 電子物理系所 === 99 === In this thesis, the high quality thick GaN substrates had been grown and characterized by Hydride Vapor Phase Epitaxy (HVPE). Then, the Schottky barrier photodetectors with freestanding GaN substrates were fabricated. This thesis is made up of two parts. In th...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/45785282586673986553 |