Schottky barrier photodetector on n-type freestanding GaN substrates.
碩士 === 國立交通大學 === 電子物理系所 === 99 === In this thesis, the high quality thick GaN substrates had been grown and characterized by Hydride Vapor Phase Epitaxy (HVPE). Then, the Schottky barrier photodetectors with freestanding GaN substrates were fabricated. This thesis is made up of two parts. In th...
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ndltd-TW-099NCTU54290232015-10-13T20:37:10Z http://ndltd.ncl.edu.tw/handle/45785282586673986553 Schottky barrier photodetector on n-type freestanding GaN substrates. 蕭特基紫外光偵測器製作於獨立式氮化鎵基板上之研究 Kao, Yu-ting 高郁婷 碩士 國立交通大學 電子物理系所 99 In this thesis, the high quality thick GaN substrates had been grown and characterized by Hydride Vapor Phase Epitaxy (HVPE). Then, the Schottky barrier photodetectors with freestanding GaN substrates were fabricated. This thesis is made up of two parts. In the first part, we focused on the difference between the schottky diodes prepared on the 2μm-thick GaN substrates by MOCVD and 300μm-thick GaN substrates by HVPE. It was found that leakage current of the PDs prepared on freestanding GaN substrate was significantly smaller due to the improved crystal quality. In the second part, we reported the fabrication of verticle photodetectors (PDs) on freestanding GaN substrate. Compared with the lateral PD prepared on the same substrate, We found the vertical PDs had smaller leakage current. It was also found that we can reduce the photoconductive gain and enhance ultraviolet-to-visible rejection ratio by using the vertical PDs with freestanding GaN substrates. 李威儀 Lee, Wei-i 2011 學位論文 ; thesis 37 zh-TW |
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碩士 === 國立交通大學 === 電子物理系所 === 99 === In this thesis, the high quality thick GaN substrates had been grown and characterized by Hydride Vapor Phase Epitaxy (HVPE). Then, the Schottky barrier photodetectors with freestanding GaN substrates were fabricated.
This thesis is made up of two parts. In the first part, we focused on the difference between the schottky diodes prepared on the 2μm-thick GaN substrates by MOCVD and 300μm-thick GaN substrates by HVPE. It was found that leakage current of the PDs prepared on freestanding GaN substrate was significantly smaller due to the improved crystal quality.
In the second part, we reported the fabrication of verticle
photodetectors (PDs) on freestanding GaN substrate. Compared with the lateral PD prepared on the same substrate, We found the vertical PDs had smaller leakage current. It was also found that we can reduce the photoconductive gain and enhance ultraviolet-to-visible rejection ratio by using the vertical PDs with freestanding GaN substrates.
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author2 |
李威儀 |
author_facet |
李威儀 Kao, Yu-ting 高郁婷 |
author |
Kao, Yu-ting 高郁婷 |
spellingShingle |
Kao, Yu-ting 高郁婷 Schottky barrier photodetector on n-type freestanding GaN substrates. |
author_sort |
Kao, Yu-ting |
title |
Schottky barrier photodetector on n-type freestanding GaN substrates. |
title_short |
Schottky barrier photodetector on n-type freestanding GaN substrates. |
title_full |
Schottky barrier photodetector on n-type freestanding GaN substrates. |
title_fullStr |
Schottky barrier photodetector on n-type freestanding GaN substrates. |
title_full_unstemmed |
Schottky barrier photodetector on n-type freestanding GaN substrates. |
title_sort |
schottky barrier photodetector on n-type freestanding gan substrates. |
publishDate |
2011 |
url |
http://ndltd.ncl.edu.tw/handle/45785282586673986553 |
work_keys_str_mv |
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