Hydrogen Etching on GaN and its Overgrowth
碩士 === 國立交通大學 === 電子物理系所 === 99 === In this work, we study the effects of hydrogen etching on GaN surfaces at different pressures and the overgrowths of GaN. After hydrogen etching at the pressure of 100 torr, the holes with high aspect ratios appear on GaN surface, and the density of the holes is a...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/92758094035333478420 |