Hydrogen Etching on GaN and its Overgrowth

碩士 === 國立交通大學 === 電子物理系所 === 99 === In this work, we study the effects of hydrogen etching on GaN surfaces at different pressures and the overgrowths of GaN. After hydrogen etching at the pressure of 100 torr, the holes with high aspect ratios appear on GaN surface, and the density of the holes is a...

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Bibliographic Details
Main Authors: Yu, Tzu-Yi, 余諮宜
Other Authors: Lee, Wei-I
Format: Others
Language:zh-TW
Published: 2011
Online Access:http://ndltd.ncl.edu.tw/handle/92758094035333478420