Hydrogen Etching on GaN and its Overgrowth

• Main Authors: Yu, Tzu-Yi, 余諮宜
• Other Authors: Lee, Wei-I
• Format: Others
• Language: zh-TW
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/92758094035333478420

碩士 === 國立交通大學 === 電子物理系所 === 99 === In this work, we study the effects of hydrogen etching on GaN surfaces at different pressures and the overgrowths of GaN. After hydrogen etching at the pressure of 100 torr, the holes with high aspect ratios appear on GaN surface, and the density of the holes is about 6.2×109cm-2; we perform hydrogen etching under this condition in the following GaN growth experiments. In growing GaN, we discuss the temperatures and pressures effects on GaN profiles and also grow epitaxy layers on hydrogen-etched templates. On long-time-etched templates, they are too rough to obtain flat surface GaN thick films. To flatten the surfaces of templates, we fill holes with silicon oxide and polish the surfaces with slurries; by using this kind of template, we can grow a high quality GaN thick film and, after laser lift-off process, get a free-standing GaN thick film, which is almost without bowing.