Random-Metal-Gate-Work-Function-Induced Electrical Characteristic Fluctuation in 16-nm-Gate CMOS Devices and Circuits
碩士 === 國立交通大學 === 電信工程研究所 === 99 === High-k/metal gate technology has been recently recognized as the key to sub-45-nanometer transistor fabrication because of the improvement of device performance and reduction of intrinsic parameter fluctuation. However, the use of metal as the gate material intro...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/01916958871319348215 |