Compact Model Parameter Extractions for MOS and TFT Devices
碩士 === 國立交通大學 === 電信工程研究所 === 99 === A set of semiconductor device model and parameters bridges the communities between circuit design and chip fabrication. With the aggressive down-scaling technologies, the surface-potential-based PSP model has been regarded as the advanced one and has been selecte...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/49288409339086360723 |