The Research of GaN LED Growth on Wet-Etch Pattern Sapphire Substrate

碩士 === 國立交通大學 === 工學院碩士在職專班半導體材料與製程設備組 === 99 === The GaN LED growth on Wet-etching pattern sapphire substrate ( WPSS ) has provide the high crystal quality and light extraction efficiency.The wet-etching method beside low coast, and lot number fabrication. That will cause the particular inclined pl...

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Bibliographic Details
Main Authors: Chen, Hauw-Ming, 陳浩明
Other Authors: 張 翼
Format: Others
Language:en_US
Published: 2011
Online Access:http://ndltd.ncl.edu.tw/handle/27704616488589005221