Planning and Design of Explosion Prevention Zones for the Semiconductor Fab

碩士 === 國立交通大學 === 工學院產業安全與防災學程 === 99 === In view of the fact that all of the current 12-inch semiconductor plants have exploited limited land space for the installing of precise and sophisticated equipments, and they have made extensively use of combustible and inflammable liquids (such as IPA, pho...

Full description

Bibliographic Details
Main Authors: Hung, Tang-Hui, 洪堂輝
Other Authors: Tsai, Chuen-Jinn
Format: Others
Language:zh-TW
Published: 2011
Online Access:http://ndltd.ncl.edu.tw/handle/09254504229335127935
id ndltd-TW-099NCTU5707088
record_format oai_dc
spelling ndltd-TW-099NCTU57070882015-10-13T20:37:10Z http://ndltd.ncl.edu.tw/handle/09254504229335127935 Planning and Design of Explosion Prevention Zones for the Semiconductor Fab 半導體廠房防爆區劃設計探討 Hung, Tang-Hui 洪堂輝 碩士 國立交通大學 工學院產業安全與防災學程 99 In view of the fact that all of the current 12-inch semiconductor plants have exploited limited land space for the installing of precise and sophisticated equipments, and they have made extensively use of combustible and inflammable liquids (such as IPA, photo-resistant liquid, and others) and special gases (such as SiH4, H2, and so on). Therefore, the fire loading and investment cost per unit area is relatively high. This thesis mainly investigates various kinds of safety designs based on domestic legal provisions and standards within the scope of explosion-proof division, with the assistance of the software ALOHA (areal locations of hazardous atmospheres) for consequence simulation analysis for the influencing region due to fire explosion. During different seasons, it was found from the ALOHA consequence simulation analysis with different wind speeds that when the wind speed was greater, it could further help increase the speed for air dilution, and so hazard of toxic gas and explosion hazard was lowered. However, heat radiation was enhanced with increasing wind speed. The simulation assumed the scenario that 12000L storage tank for isopropyl alcohol (IPA) unfortunately leaked, the concentration of its inflammable vapor did not reach the explosion level. Nonetheless, if the tank fire continued to burn, the influence of heat radiation within 10m region won’t result in the hazard of immediate death. However, if boiling liquid expansion vapor explosion (BLEVE) occurred, it would create devastative influence on the entire plant and neighboring manufacturing plants, with its scope region reaching 101-107 m. For the operation of a 12kg steel-bottle of silane, if instantaneous and complete leakage occurred or continuous gas leakage was found from its pipeline, 0.7 psi of impact with overpressure explosion would occur within a region of 13-15 m to leakage source. Therefore, all kinds of fire operation must be prohibited and explore-proof electrical equipment must be effectively used within the control range of 85-90 m. Tsai, Chuen-Jinn 蔡春進 2011 學位論文 ; thesis 120 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 國立交通大學 === 工學院產業安全與防災學程 === 99 === In view of the fact that all of the current 12-inch semiconductor plants have exploited limited land space for the installing of precise and sophisticated equipments, and they have made extensively use of combustible and inflammable liquids (such as IPA, photo-resistant liquid, and others) and special gases (such as SiH4, H2, and so on). Therefore, the fire loading and investment cost per unit area is relatively high. This thesis mainly investigates various kinds of safety designs based on domestic legal provisions and standards within the scope of explosion-proof division, with the assistance of the software ALOHA (areal locations of hazardous atmospheres) for consequence simulation analysis for the influencing region due to fire explosion. During different seasons, it was found from the ALOHA consequence simulation analysis with different wind speeds that when the wind speed was greater, it could further help increase the speed for air dilution, and so hazard of toxic gas and explosion hazard was lowered. However, heat radiation was enhanced with increasing wind speed. The simulation assumed the scenario that 12000L storage tank for isopropyl alcohol (IPA) unfortunately leaked, the concentration of its inflammable vapor did not reach the explosion level. Nonetheless, if the tank fire continued to burn, the influence of heat radiation within 10m region won’t result in the hazard of immediate death. However, if boiling liquid expansion vapor explosion (BLEVE) occurred, it would create devastative influence on the entire plant and neighboring manufacturing plants, with its scope region reaching 101-107 m. For the operation of a 12kg steel-bottle of silane, if instantaneous and complete leakage occurred or continuous gas leakage was found from its pipeline, 0.7 psi of impact with overpressure explosion would occur within a region of 13-15 m to leakage source. Therefore, all kinds of fire operation must be prohibited and explore-proof electrical equipment must be effectively used within the control range of 85-90 m.
author2 Tsai, Chuen-Jinn
author_facet Tsai, Chuen-Jinn
Hung, Tang-Hui
洪堂輝
author Hung, Tang-Hui
洪堂輝
spellingShingle Hung, Tang-Hui
洪堂輝
Planning and Design of Explosion Prevention Zones for the Semiconductor Fab
author_sort Hung, Tang-Hui
title Planning and Design of Explosion Prevention Zones for the Semiconductor Fab
title_short Planning and Design of Explosion Prevention Zones for the Semiconductor Fab
title_full Planning and Design of Explosion Prevention Zones for the Semiconductor Fab
title_fullStr Planning and Design of Explosion Prevention Zones for the Semiconductor Fab
title_full_unstemmed Planning and Design of Explosion Prevention Zones for the Semiconductor Fab
title_sort planning and design of explosion prevention zones for the semiconductor fab
publishDate 2011
url http://ndltd.ncl.edu.tw/handle/09254504229335127935
work_keys_str_mv AT hungtanghui planninganddesignofexplosionpreventionzonesforthesemiconductorfab
AT hóngtánghuī planninganddesignofexplosionpreventionzonesforthesemiconductorfab
AT hungtanghui bàndǎotǐchǎngfángfángbàoqūhuàshèjìtàntǎo
AT hóngtánghuī bàndǎotǐchǎngfángfángbàoqūhuàshèjìtàntǎo
_version_ 1718049866679058432