The Effect of Various Surface Treatment to ZrO2/HfO2 Stack Dielectric Thin Films
碩士 === 國立交通大學 === 電機學院微電子奈米科技產業專班 === 99 === The aggressive scaling of MOS devices is quickly reaching the fundamental and electric limits of convention SiO2 as the gate insulator. When the gate length scales down below 100nm, the gate thickness will scale down below 1.2 nm, the SiO2 gate dielec...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/88697805531771933751 |