Effects of Platinum Silicide Formation on Si1-yCy Epitaxial Layers and Thermal Stability
碩士 === 國立中央大學 === 材料科學與工程研究所 === 99 === Strain engineering is commonly used for improving the performance of metal-oxide-semiconductor (MOS) devices. For example, n-channel MOS (NMOS) devices with silicon-carbon (Si1-yCy) grown in the source and drain (S/D) regions as uniaxial compressive stressors...
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| Format: | Others |
| Language: | zh-TW |
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2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/01152029825856939751 |