Optical properties of Ge/Si/Ge quantum dot in multilayer structure

碩士 === 國立中央大學 === 物理研究所 === 99 === In this paper, we have studied the optical properties of Ge/Si/Ge quantum dots (QDs) structure by using Photoluminescence (PL) spectroscopy.And we use rapid thermal annealing process to improve its light efficiency.Comparing the PL measurements of Ge/Si/Ge QDs stru...

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Bibliographic Details
Main Authors: Hung-Bin Chen, 陳弘斌
Other Authors: T. M. Hsu
Format: Others
Language:zh-TW
Published: 2011
Online Access:http://ndltd.ncl.edu.tw/handle/59065285991693145803