Optical properties of Ge/Si/Ge quantum dot in multilayer structure
碩士 === 國立中央大學 === 物理研究所 === 99 === In this paper, we have studied the optical properties of Ge/Si/Ge quantum dots (QDs) structure by using Photoluminescence (PL) spectroscopy.And we use rapid thermal annealing process to improve its light efficiency.Comparing the PL measurements of Ge/Si/Ge QDs stru...
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ndltd-TW-099NCU051980232017-07-08T16:28:25Z http://ndltd.ncl.edu.tw/handle/59065285991693145803 Optical properties of Ge/Si/Ge quantum dot in multilayer structure 鍺/矽/鍺多層量子點結構之光學特性研究 Hung-Bin Chen 陳弘斌 碩士 國立中央大學 物理研究所 99 In this paper, we have studied the optical properties of Ge/Si/Ge quantum dots (QDs) structure by using Photoluminescence (PL) spectroscopy.And we use rapid thermal annealing process to improve its light efficiency.Comparing the PL measurements of Ge/Si/Ge QDs structure with Ge/Si QDs structure, the structural difference effect on optical properties is studied. According to the emission energy of annealed samples in excitation-powerdependent PL measurements, we found that Ge/Si/Ge QDs structure has higher emission energy and lower carriers confinement depth due to atomic intermixing effect. According to the PL intensity with power sublinear relation at different temperature measurements, we suggest that the defect has negative effect on light efficiency because emitting light will be absorbed by the electrons confined in the defect. Finally, we found that the Ge/Si/Ge QDs structure has higher activation energy from Temperature-dependent PL measurements. Therefore, we point out that the holes in Ge/Si/Ge QDs structure probably can exist on nearby QDs by tunneling effect. T. M. Hsu 徐子民 2011 學位論文 ; thesis 67 zh-TW |
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碩士 === 國立中央大學 === 物理研究所 === 99 === In this paper, we have studied the optical properties of Ge/Si/Ge quantum dots (QDs) structure by using Photoluminescence (PL) spectroscopy.And we use rapid thermal annealing process to improve its light efficiency.Comparing the PL measurements of Ge/Si/Ge QDs structure with Ge/Si QDs structure, the structural difference effect on optical properties is studied.
According to the emission energy of annealed samples in excitation-powerdependent PL measurements, we found that Ge/Si/Ge QDs structure has higher emission energy and lower carriers confinement depth due to atomic intermixing
effect. According to the PL intensity with power sublinear relation at different temperature measurements, we suggest that the defect has negative effect on light efficiency because emitting light will be absorbed by the electrons confined in the defect. Finally, we found that the Ge/Si/Ge QDs structure has higher activation energy from Temperature-dependent PL measurements. Therefore, we
point out that the holes in Ge/Si/Ge QDs structure probably can exist on nearby QDs by tunneling effect.
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T. M. Hsu |
author_facet |
T. M. Hsu Hung-Bin Chen 陳弘斌 |
author |
Hung-Bin Chen 陳弘斌 |
spellingShingle |
Hung-Bin Chen 陳弘斌 Optical properties of Ge/Si/Ge quantum dot in multilayer structure |
author_sort |
Hung-Bin Chen |
title |
Optical properties of Ge/Si/Ge quantum dot in multilayer structure |
title_short |
Optical properties of Ge/Si/Ge quantum dot in multilayer structure |
title_full |
Optical properties of Ge/Si/Ge quantum dot in multilayer structure |
title_fullStr |
Optical properties of Ge/Si/Ge quantum dot in multilayer structure |
title_full_unstemmed |
Optical properties of Ge/Si/Ge quantum dot in multilayer structure |
title_sort |
optical properties of ge/si/ge quantum dot in multilayer structure |
publishDate |
2011 |
url |
http://ndltd.ncl.edu.tw/handle/59065285991693145803 |
work_keys_str_mv |
AT hungbinchen opticalpropertiesofgesigequantumdotinmultilayerstructure AT chénhóngbīn opticalpropertiesofgesigequantumdotinmultilayerstructure AT hungbinchen duǒxìduǒduōcéngliàngzidiǎnjiégòuzhīguāngxuétèxìngyánjiū AT chénhóngbīn duǒxìduǒduōcéngliàngzidiǎnjiégòuzhīguāngxuétèxìngyánjiū |
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