Optical properties of Ge QDs embedded in Si3N4/SiO2
碩士 === 國立中央大學 === 物理研究所 === 99 === In this thesis, we have studied the emission characteristics of Ge QDs embedded in Si3N4/SiO2 matrices by photoluminescence (PL) and photoreflectance (PR). The size dependent PL spectra shows a redshift of the peak energy with increasing QD size. The effect is cons...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/39215270763119176000 |