Comparison between BJT model and MOSFET model with linear circuit elements
碩士 === 國立中央大學 === 電機工程研究所碩士在職專班 === 99 === In this thesis, to compare the bipolar-junction transistor (BJT) and metal-oxide-semiconductor field-effect transistor (MOSFET) model, we develop nonlinear circuit simulations based on the linear components. The basic linear components include voltage sourc...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/11935380668995021910 |