Fabrication of Germanium Nanowire and high concentration SiGe Oxidation Mechanism Study
碩士 === 國立中央大學 === 電機工程研究所 === 99 === This thesis investigates the key mechanism of forming Ge-QDs or nanowire by the selective oxidaizing SiGe, then brings up the planar oxidation high concentration SiGe model. Through experimental data for assisting the accuracy of this model, we furthermore estima...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/43242286125175197149 |