Fabrication and Electrical Characterization of Tripled Coupled Ge-QD Tunneling Diode
碩士 === 國立中央大學 === 電機工程研究所 === 99 === In this thesis, we are able to form triple coupled Ge-QD tunneling diodes with controlled thickness (10 nm-18 nm) of tunneling barrier by way of forming spacer layers on patterned grating structure without complicated, advanced lithography and etching. Closely co...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/45322698759983582659 |