Placement of Ge quantum dots in silicon nitride substrate and realization of Ge quantum dots visible-light photo-diodes
碩士 === 國立中央大學 === 電機工程研究所 === 99 === In this thesis, we demonstrated the precise placement of Ge quantum dots (QDs) in Si3N4 and SiO2 matrices by selectively oxidizing poly-SiGe-on-SiO2 or -Si3N4. Thereby, we are able to modulate electronic structure of Ge QDs by means of altering their size and the...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/53720075419728919435 |