IEGT and FS-IGBT layout design and analysis
碩士 === 國立中央大學 === 電機工程研究所 === 99 === Insulated Gate Bipolar Transistor (IGBT), which integrates the structures of Power Bipolar Transistor and Power MOSFET, and has better performance in many applications. It has low conduction resistance and high output current density. In this thesis, we use devic...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/92547963180545213022 |