IEGT and FS-IGBT layout design and analysis

• Main Authors: Cheng-kang Wang, 王晟康
• Other Authors: Yue-Ming Hsin
• Format: Others
• Language: zh-TW
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/92547963180545213022

碩士 === 國立中央大學 === 電機工程研究所 === 99 === Insulated Gate Bipolar Transistor (IGBT), which integrates the structures of Power Bipolar Transistor and Power MOSFET, and has better performance in many applications. It has low conduction resistance and high output current density. In this thesis, we use device characteristics simulation tools to simulate the device structure and analyze the semiconductor physics characteristics. Due to the simulations, we can have a precise result to improve the process parameter. The IGBT is mainly toward improve the power performance, reduce the loss of power performance, having the lower conduction resistance and high breakdown voltage. We consult the device from TOSHIBA and Infineon company, and design a series of simulations.