Current Stress Study of InGaAsSb Base Heterojunction Bipolar Transistors
碩士 === 國立中央大學 === 電機工程研究所 === 99 === InP-based heterojunction bipolar transistors (HBTs) with antimonide (Sb) content in the base, such as GaAsSb and InGaAsSb, have received a great deal of attention because of their excellent dc and microwave performance associated with type-II band alignment at th...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/47641430072582683333 |