Current Stress Study of InGaAsSb Base Heterojunction Bipolar Transistors
碩士 === 國立中央大學 === 電機工程研究所 === 99 === InP-based heterojunction bipolar transistors (HBTs) with antimonide (Sb) content in the base, such as GaAsSb and InGaAsSb, have received a great deal of attention because of their excellent dc and microwave performance associated with type-II band alignment at th...
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ndltd-TW-099NCU054421092017-07-15T04:29:01Z http://ndltd.ncl.edu.tw/handle/47641430072582683333 Current Stress Study of InGaAsSb Base Heterojunction Bipolar Transistors 銻砷化銦鎵基極之異質接面雙極性電晶體於高電流密度操作後之特性研究 Yu-Sheng Lin 林祐聖 碩士 國立中央大學 電機工程研究所 99 InP-based heterojunction bipolar transistors (HBTs) with antimonide (Sb) content in the base, such as GaAsSb and InGaAsSb, have received a great deal of attention because of their excellent dc and microwave performance associated with type-II band alignment at the base/collector (B/C) junction. However, the reliability issues associated with the Sb-containing base have not been well studied to date. In this work, the effects of current stress on the electrical characteristics of HBTs with a highly beryllium (Be)-doped InGaAsSb base were investigated. Devices with an emitter size of 1×10 ?m2 were fabricated by a triple mesa wet-etching process. The stress current density used in this work was either 150 or 300 kA/cm2. To accelerate device degradation, current stress was performed at a junction temperature of 200 and 250 ℃. The collector currents for all the InGaAsSb base HBTs show parallel shifts toward higher base/emitter voltage after the stress. The unchanged collector ideality factors and junction capacitances imply that there were no Be out-diffusion at the junctions, thereby indicating the strength of InGaAsSb base HBTs for higher current density operations. Jen-Inn Chyi 綦振瀛 2011 學位論文 ; thesis 61 zh-TW |
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碩士 === 國立中央大學 === 電機工程研究所 === 99 === InP-based heterojunction bipolar transistors (HBTs) with antimonide (Sb) content in the base, such as GaAsSb and InGaAsSb, have received a great deal of attention because of their excellent dc and microwave performance associated with type-II band alignment at the base/collector (B/C) junction. However, the reliability issues associated with the Sb-containing base have not been well studied to date.
In this work, the effects of current stress on the electrical characteristics of HBTs with a highly beryllium (Be)-doped InGaAsSb base were investigated. Devices with an emitter size of 1×10 ?m2 were fabricated by a triple mesa wet-etching process. The stress current density used in this work was either 150 or 300 kA/cm2. To accelerate device degradation, current stress was performed at a junction temperature of 200 and 250 ℃. The collector currents for all the InGaAsSb base HBTs show parallel shifts toward higher base/emitter voltage after the stress. The unchanged collector ideality factors and junction capacitances imply that there were no Be out-diffusion at the junctions, thereby indicating the strength of InGaAsSb base HBTs for higher current density operations.
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author2 |
Jen-Inn Chyi |
author_facet |
Jen-Inn Chyi Yu-Sheng Lin 林祐聖 |
author |
Yu-Sheng Lin 林祐聖 |
spellingShingle |
Yu-Sheng Lin 林祐聖 Current Stress Study of InGaAsSb Base Heterojunction Bipolar Transistors |
author_sort |
Yu-Sheng Lin |
title |
Current Stress Study of InGaAsSb Base Heterojunction Bipolar Transistors |
title_short |
Current Stress Study of InGaAsSb Base Heterojunction Bipolar Transistors |
title_full |
Current Stress Study of InGaAsSb Base Heterojunction Bipolar Transistors |
title_fullStr |
Current Stress Study of InGaAsSb Base Heterojunction Bipolar Transistors |
title_full_unstemmed |
Current Stress Study of InGaAsSb Base Heterojunction Bipolar Transistors |
title_sort |
current stress study of ingaassb base heterojunction bipolar transistors |
publishDate |
2011 |
url |
http://ndltd.ncl.edu.tw/handle/47641430072582683333 |
work_keys_str_mv |
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