Current Stress Study of InGaAsSb Base Heterojunction Bipolar Transistors
碩士 === 國立中央大學 === 電機工程研究所 === 99 === InP-based heterojunction bipolar transistors (HBTs) with antimonide (Sb) content in the base, such as GaAsSb and InGaAsSb, have received a great deal of attention because of their excellent dc and microwave performance associated with type-II band alignment at th...
Main Authors: | Yu-Sheng Lin, 林祐聖 |
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Other Authors: | Jen-Inn Chyi |
Format: | Others |
Language: | zh-TW |
Published: |
2011
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Online Access: | http://ndltd.ncl.edu.tw/handle/47641430072582683333 |
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