| Summary: | 碩士 === 國立中央大學 === 光電科學研究所 === 99 === An Al-doped zinc oxide (AZO) transparent conductive film is deposited on glass by pulsed DC magnetron sputtering. We change the H2 flows during the deposition processes to investigate the change of the electrical and optical properties through the different H2 flows deposition at room temperature. The AZO film with 30sccm H2 flows during the deposition process can have low resistivity (4.31×10-4 Ω-cm) and high average transmittance in visible region (85.63%).
The Hydrogen doped AZO films can have great electrical and optical properties. However, the hydrogen in the AZO film is unstable in high temperature. The hydrogen would leave the AZO film during the thermal treatment. After 350℃ post annealing, the resistivity increases to 1.07×10-3 Ω-cm. And the carrier concentration decreases form 1.7×1021cm-3 to 7.51×1020cm-3.
In order to increase the thermal stability of the hydrogen doped AZO films. We deposit an AZO protection film above the hydrogen doped AZO films to reduce the chance of the hydrogen departing from AZO films. The resistivity of the hydrogen doped AZO film with 50nm protection film, decreases from 5.91×10-4Ω-cm to 5.63×10-4Ω-cm (decreasing 4.7%). Comparatively, the resistivity of the hydrogen doped AZO film without protection film, increases from 4.31×10-4Ω-cm to 7.79×10-4Ω-cm (increasing 66.8%).
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