Study on the effects of growth parameters on the thin film quality of In-rich InGaN
碩士 === 國立彰化師範大學 === 電子工程學系 === 99 === The effect of buffer layer structure, growth temperature and V/III ratio on the film quality of In rich InGaN thin films grown by molecular beam epitaxy have been explored. First, adding the buffer layer structure to InGaN with about 80% of indium content reduce...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/12854176055325977217 |