Effect of silicon nitride on AlGaAs/InGaAs high-electron mobility transistors
碩士 === 國立東華大學 === 材料科學與工程學系 === 99 === In this thesis, the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors (PHEMTs) grown by metal organic chemical-vapor deposition (MOCVD) have been successfully fabricated. In order to reduce the surface effect on the schottky layer , Si...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/96277548872395354272 |