Characteristics of TiOx Based RRAM Device Fabricated by Thermal Oxidation
碩士 === 國立東華大學 === 電機工程學系 === 99 === Most of the proposed TiOx-based resistive random access memory (RRAM) devices were fabricated by RF sputtering or atom layer deposition. However, in this thesis, the TiOx film was prepared by thermal oxidation method. The thermal oxidation method has many advant...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/18614296664718260561 |