| Summary: | 碩士 === 國立東華大學 === 電機工程學系 === 99 === Most of the proposed TiOx-based resistive random access memory (RRAM) devices were fabricated by RF sputtering or atom layer deposition. However, in this thesis, the TiOx film was prepared by thermal oxidation method. The thermal oxidation method has many advantages such as low cost and simple fabrication process. First, a 50-nm-thick Ti metal film was thermally oxidized into a TiOx film in O2 ambiance at 550oC for 15min. After that, the TiOx film was annealed at 600oC for 1min by rapid thermal annealing. Then, the crystallization and the microstructure of the TiOx film were determined by X-ray diffraction and scanning electron microscopy, respectively. Finally, the effect of Al and Cu top electrode on resistive switching properties of the TiOx-based RRAM device was investigated.
The Al/TiOx/Pt and the Cu/TiOx/Pt devices show bipolar switching characteristics. According to the experimental results, the Al/TiOx/Pt device, in comparison with Cu/TiOx/Pt device, exhibits good resistive switching properties, such as good endurance (over 300 cycles), low reset voltage, low set voltage, and large current ratio. In this case, the redox reaction at the Al top electrode and TiOx film interface leading to the good resistive switching properties are discussed.
In the thesis, chapter 1 is the introduction and research motivation. Chapter 2 introduces the next generation non-volatile memories and the development of RRAM. Chapter 3 presents the device fabricating process and the electrical measurement methods. Chapter 4 discusses the effect of Al and Cu top electrodes on TiOx-based RRAM device. Chapter 5 is the conclusions of the most important results.
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