Simulation of 80-nm Symmetric with Asymmetric n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors and Poly-Si Nanowire Transistors
碩士 === 國立東華大學 === 電機工程學系 === 99 === As the metal-oxide-semiconductor field-effect transistors (MOSFETs) keep scaling down, the difficulty and cost of their manufacturing process become higher and the short channel effects (SCEs) get worse. In this paper, we use the commercial semiconductor process a...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/20022034744481369624 |