Simulation of Ion Implantation Optimization for the 80-nm Metal-Oxide-Semiconductor Field-Effect Transistor and Preliminary Study of Monte Carlo Ion Implant Simulation
碩士 === 國立東華大學 === 電機工程學系 === 99 === In this paper we use the commercial semiconductor process and device simulator, Sentaurus, to simulate for one-dimensional ion implant characteristic, the two-dimensional ion implantation 80-nm metal-oxide-semiconductor field-effect transistor (MOSFET) and the...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/70718075250348370912 |