Simulation of Ion Implantation Optimization for the 80-nm Metal-Oxide-Semiconductor Field-Effect Transistor and Preliminary Study of Monte Carlo Ion Implant Simulation

• Main Authors: Sheng-Fu Hsu, 許勝富
• Other Authors: Keng-Ming Liu
• Format: Others
• Language: zh-TW
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/70718075250348370912

碩士 === 國立東華大學 === 電機工程學系 === 99 === In this paper we use the commercial semiconductor process and device simulator, Sentaurus, to simulate for one-dimensional ion implant characteristic, the two-dimensional ion implantation 80-nm metal-oxide-semiconductor field-effect transistor (MOSFET) and the device characteristics and initial to discuss Monte Carlo ion implant effect. First one-dimensional ion implant change wafer orientation, screen oxide thickness , trivalent element , pentavalent element for junction depth effect. We simulated the effects of different process parameters of halo implant, of lightly-doped drain (LDD) implant,and soure/drain ion implant. Based on the simulation results, we can obtain a set of optimized parameters of ion implantation for the two-dimensional 80-nm MOSFET. The ion implantation parameters we varied include: the dose of halo implant, the energy of halo implant, the rotation degree of halo implant, the energy of lightly-doped drain implant, and the energy of soure/drain implant. We investigate the influences of these ion implantation parameters on the device characteristics like: threshold voltage, subthreshold swing (SS), drain-induced barrier lowering (DIBL), on current (Ion) ,off current (Ioff) , and on-off ratio to achieve the ion implantation optimization. We also study the Monte Carlo simulation of ion implant in the early stage.