Simulation of Ion Implantation Optimization for the 80-nm Metal-Oxide-Semiconductor Field-Effect Transistor and Preliminary Study of Monte Carlo Ion Implant Simulation
碩士 === 國立東華大學 === 電機工程學系 === 99 === In this paper we use the commercial semiconductor process and device simulator, Sentaurus, to simulate for one-dimensional ion implant characteristic, the two-dimensional ion implantation 80-nm metal-oxide-semiconductor field-effect transistor (MOSFET) and the...
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ndltd-TW-099NDHU54420652015-10-13T20:46:53Z http://ndltd.ncl.edu.tw/handle/70718075250348370912 Simulation of Ion Implantation Optimization for the 80-nm Metal-Oxide-Semiconductor Field-Effect Transistor and Preliminary Study of Monte Carlo Ion Implant Simulation 80奈米金氧半場效電晶體中離子佈植最佳化之模擬及初步探討蒙地卡羅離子佈植之模擬 Sheng-Fu Hsu 許勝富 碩士 國立東華大學 電機工程學系 99 In this paper we use the commercial semiconductor process and device simulator, Sentaurus, to simulate for one-dimensional ion implant characteristic, the two-dimensional ion implantation 80-nm metal-oxide-semiconductor field-effect transistor (MOSFET) and the device characteristics and initial to discuss Monte Carlo ion implant effect. First one-dimensional ion implant change wafer orientation, screen oxide thickness , trivalent element , pentavalent element for junction depth effect. We simulated the effects of different process parameters of halo implant, of lightly-doped drain (LDD) implant,and soure/drain ion implant. Based on the simulation results, we can obtain a set of optimized parameters of ion implantation for the two-dimensional 80-nm MOSFET. The ion implantation parameters we varied include: the dose of halo implant, the energy of halo implant, the rotation degree of halo implant, the energy of lightly-doped drain implant, and the energy of soure/drain implant. We investigate the influences of these ion implantation parameters on the device characteristics like: threshold voltage, subthreshold swing (SS), drain-induced barrier lowering (DIBL), on current (Ion) ,off current (Ioff) , and on-off ratio to achieve the ion implantation optimization. We also study the Monte Carlo simulation of ion implant in the early stage. Keng-Ming Liu 劉耿銘 2011 學位論文 ; thesis 67 zh-TW |
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碩士 === 國立東華大學 === 電機工程學系 === 99 === In this paper we use the commercial semiconductor process and device simulator, Sentaurus, to simulate for one-dimensional ion implant characteristic, the two-dimensional ion implantation 80-nm metal-oxide-semiconductor field-effect transistor (MOSFET) and the device characteristics and initial to discuss Monte Carlo ion implant effect. First one-dimensional ion implant change wafer orientation, screen oxide thickness , trivalent element , pentavalent element for junction depth effect.
We simulated the effects of different process parameters of halo implant, of lightly-doped drain (LDD) implant,and soure/drain ion implant. Based on the simulation results, we can obtain a set of optimized parameters of ion implantation for the two-dimensional 80-nm MOSFET. The ion implantation parameters we varied include: the dose of halo implant, the energy of halo implant, the rotation degree of halo implant, the energy of lightly-doped drain implant, and the energy of soure/drain implant. We investigate the influences of these ion implantation parameters on the device characteristics like: threshold voltage, subthreshold swing (SS), drain-induced barrier lowering (DIBL), on current (Ion) ,off current (Ioff) , and on-off ratio to achieve the ion implantation optimization. We also study the Monte Carlo simulation of ion implant in the early stage.
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Keng-Ming Liu |
author_facet |
Keng-Ming Liu Sheng-Fu Hsu 許勝富 |
author |
Sheng-Fu Hsu 許勝富 |
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Sheng-Fu Hsu 許勝富 Simulation of Ion Implantation Optimization for the 80-nm Metal-Oxide-Semiconductor Field-Effect Transistor and Preliminary Study of Monte Carlo Ion Implant Simulation |
author_sort |
Sheng-Fu Hsu |
title |
Simulation of Ion Implantation Optimization for the 80-nm Metal-Oxide-Semiconductor Field-Effect Transistor and Preliminary Study of Monte Carlo Ion Implant Simulation |
title_short |
Simulation of Ion Implantation Optimization for the 80-nm Metal-Oxide-Semiconductor Field-Effect Transistor and Preliminary Study of Monte Carlo Ion Implant Simulation |
title_full |
Simulation of Ion Implantation Optimization for the 80-nm Metal-Oxide-Semiconductor Field-Effect Transistor and Preliminary Study of Monte Carlo Ion Implant Simulation |
title_fullStr |
Simulation of Ion Implantation Optimization for the 80-nm Metal-Oxide-Semiconductor Field-Effect Transistor and Preliminary Study of Monte Carlo Ion Implant Simulation |
title_full_unstemmed |
Simulation of Ion Implantation Optimization for the 80-nm Metal-Oxide-Semiconductor Field-Effect Transistor and Preliminary Study of Monte Carlo Ion Implant Simulation |
title_sort |
simulation of ion implantation optimization for the 80-nm metal-oxide-semiconductor field-effect transistor and preliminary study of monte carlo ion implant simulation |
publishDate |
2011 |
url |
http://ndltd.ncl.edu.tw/handle/70718075250348370912 |
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