Annealing effects of ZnO thin film growth at room temperature by atomic layer deposition
碩士 === 國立新竹教育大學 === 人資處應用科學系教學碩士班 === 99 === In this study, Zinc Oxide (ZnO) thin films were grown at 25oC on m-plane sapphire and silicon substrate by using atomic layer deposition with diethylzinc (DEZn) and deionized water (H2O) as the precursor. The results for as grown zinc oxide thin films, a...
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| Format: | Others |
| Language: | zh-TW |
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2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/24741300820949486611 |