Epitaxial growth and annealing effect on the structural, optical and electrical properties of ZnO thin films grown by atomic layer deposition
碩士 === 國立新竹教育大學 === 應用科學系碩士班 === 99 === Non-polar (1000) ZnO epitaxial thin films have been prepared on (101 ̅0) m-plane sapphire by using atomic layer deposition (ALD) method , the comparison results of conventional (non-stock mode) and flow-rate interruption method (FRI or stock mode) showed the t...
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| Format: | Others |
| Language: | zh-TW |
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2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/40457349653331021250 |