Electrical Properties and Physical Mechanisms of Advanced MOSFETs
博士 === 國立中山大學 === 光電工程學系研究所 === 99 === In this thesis, we investigate the electrical properties and reliability of novel metal-oxide-semiconductor field-effect transistors (MOSFETs) for 65 nm technology node and below. Roughly, we divide the thesis into two parts, strained-silicon channel engineerin...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/60724755878799240915 |