Fabrication and Investigation on Boron Nitride based Thin Filmfor Non-Volatile Resistance Switching Memory
碩士 === 國立中山大學 === 光電工程學系研究所 === 99 === In recent years, due to the rapid development of electronic products, non-volatile memory has become more and more important. However, flash memory has faced some physical limits bottleneck with size scaling-down. In order to overcome this problem, alternative...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2011
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/02373020074874570399 |