Growth of (0002) InN Films on (001)LiGaO2 substrate by chemical vapor deposition method
碩士 === 國立中山大學 === 材料與光電科學學系研究所 === 99 === This article aims at growing (0002) InN film on LiGaO2 substrate by chemical vapor deposition (CVD). High purity InCl3 and metallic indium were used to react with NH3 respectively to form InN. Different experimental condictions such as growth temperature and...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/43576670987291152268 |