Growth of free-standing GaN(0002) on LiGaO2 substrates by hydride vapor phase epitaxy
碩士 === 國立中山大學 === 材料與光電科學學系研究所 === 99 === In this paper, polar free-standing (0002)GaN wafer were fabricated by using the hydride vapor phase epitaxy(HVPE) technique on (002) LiGaO2 substrates. Polar of The (0002) GaN affects its luminous efficiency, but compared to other surface between the substra...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/35101016455612237677 |