Investigation on the Physical Mechanism and Reliability of Amorphous InGaZnO4 Thin Film Transistors under Different Environment and Illumination
碩士 === 國立中山大學 === 物理學系研究所 === 99 === In recent years, amorphous oxide semiconductors have been studied due to their superior characteristics, such as transparent property, high electron mobility exceeding 10 cm2/V‧s, and can be fabricated on plastic substrates at low temperatures. According to these...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/80108109222477153081 |