Fabrication and Characterization of InGaN Solar Cell
碩士 === 國立中山大學 === 物理學系研究所 === 99 === The experiment divided into two parts. One is silicon solar cell process. The other is InGaN solar cell process. Borosilicafilm solution spin onto the n-type silicon (111) substrate and spread through the high-temperature furnace tube to form a p-n junction silic...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/68556853348701376019 |