Heating element considerations in device and metal interconnect reliabilities
博士 === 國立清華大學 === 材料科學工程學系 === 99 === The wafer-level isothermal electromigration (ISO-EM) test is performed at high current density that is approximately several hundred folds of the normal current density in use. The ISO-EM stress time is very short, around several tens minutes. The ISO-EM test is...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/27615078489123888392 |