Atomic Layer Deposition of High-k Materials for Gate Dielectric and Charge Trap Memory Application
博士 === 國立清華大學 === 材料科學工程學系 === 99 === In this thesis, we use the atomic-layer-deposition (ALD) technique with remote-plasma system to prepare high-κ dielectrics, including HfO2, HfO2/La2O3/HfO2 stack, LaHfOx alloy and HfO2 with LaTiOx capping layer on H-terminated silicon substrate for MOSFET gate o...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/81446914589557222034 |