Study of resistive switching behaviors for Mn doped ZnO nanorods
碩士 === 國立清華大學 === 材料科學工程學系 === 99 === There are two approches to enhance the resistive switching behavior in ZnO-based RRAM. One is trying to improve the resistive switching characteristics through the nanorods-limited geometry in ZnO-based RRAM devices. The other is trying to adjust concentration o...
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| Format: | Others |
| Language: | en_US |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/46149220634369114424 |