Study on Electrode Materials and Switching Characteristics of HfO2 Bipolar Resistive Memory
碩士 === 國立清華大學 === 電子工程研究所 === 99 === In this thesis, we discuss on the top electrode effect, current conduction mechanism and annealing effect for the HfO2 based RRAM. At the discussion of the top electrode effect, the W top electrode causes the device to present unipolar operation, but in the W/Ti...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/25086875614433159578 |