Analysis and Modeling of Edge Effect on Inter-Poly Dielectric Layer of Floating Gate Flash Memory
碩士 === 國立清華大學 === 電子工程研究所 === 99 === The “edge effect” means that edge of oxide would be abnormal after performing high temperature process, and the efficiency of device will degrade. Edge effect on inter-poly dielectric (IPD) layer of floating gate flash memory occurs when re-oxidation restores the...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/29512279502310702623 |