Study of the Photodetector Structures in Standard SiGe BiCMOS Technology
碩士 === 國立清華大學 === 電子工程研究所 === 99 === High photoresponsivity photodetectors (PD) are implemented in standard SiGe BiCMOS technology in this work. Different PD structures are attempted to achieve peak shift of responsivity. Phototransistors that can amplify photo current are also investigated. Th...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/72194312943301533822 |