Study of the Photodetector Structures in Standard SiGe BiCMOS Technology

• Main Authors: Lin, Wei-Cheng, 林威成
• Other Authors: Hsu, Yung-Jane
• Format: Others
• Language: zh-TW
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/72194312943301533822

碩士 === 國立清華大學 === 電子工程研究所 === 99 === High photoresponsivity photodetectors (PD) are implemented in standard SiGe BiCMOS technology in this work. Different PD structures are attempted to achieve peak shift of responsivity. Phototransistors that can amplify photo current are also investigated. The challenge in the design process, lies on optimizing the sensing area under the DRC limitation of the standard technology. Each phtodetector fabricated in TSMC 0.35um SiGe BiCMOS technology has an area of 30um x 30um. PD structures with shallow junctions are attempted to achieve blue-shift of responsivity peak. By using the current amplification capability, phototransistors with deep junctions achieve good photoresponsivity higher than that of normal PD structures. These photodetectors have small area and high photoresponsivity and can be applied to image sensor applications.