Resistive Switching Characteristics of Nitrogen Doped ZrO2 Memory Devices
碩士 === 國立清華大學 === 工程與系統科學系 === 99 === The objective of this study is to improve the resistive switching characteristics of ZrO2 RRAM by doping nitrogen into ZrO2 insulator layer. The N-doped ZrO2 thin films were deposited by magnetron sputtering with nitrogen content ranging from 1.8% to 6.0%. The I...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/62702329248667543821 |