AlGaInP-based LEDs with a p+-GaP window layer and a thermally annealed ITO contact
碩士 === 國立臺南大學 === 光電工程研究所 === 99 === In this study, indium tin oxide (ITO) films were deposited on p-type GaP films with a AuBe diffused metal layer to form ohmic contacts. Without the AuBe diffused into p-GaP films, the ITO deposited on p-GaP showed a non-ohmic characteristic. After the AuBe diffus...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/11602395043266134895 |