Preparation and Properties of Cu Films with Dilute Insoluble Substances for Barrierless Metallization on GaAs

博士 === 國立臺灣海洋大學 === 材料工程研究所 === 99 === Barrierless copper metallization on GaAs was conducted and the film structure thus obtained characterized. Pure Cu films and Cu doped with Ta, Ru, and N were co-sputtered by R.F. magnetron sputter deposition on barrierless GaAs, followed by post-annealing for 1...

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Bibliographic Details
Main Authors: Wean-Kuan Leau, 柳文冠
Other Authors: J. P. Chu
Format: Others
Language:en_US
Published: 2011
Online Access:http://ndltd.ncl.edu.tw/handle/62974340898266752596