Preparation of p-type ZnO films on InN/GaN layers by sol-gel method

碩士 === 國立臺灣海洋大學 === 光電科學研究所 === 99 === In this thesis, we successfully fabricated the InN codoped p-type ZnO films on n-type GaN epilayer by sol-gel spin-coating. Scanning electron microscopy images showed that the thicknesses of ZnO films are around 200~300 nm. Atomic force microscopy images showe...

Full description

Bibliographic Details
Main Authors: Shao-Lun Chang, 張少倫
Other Authors: Tai-Yuan Lin
Format: Others
Language:zh-TW
Published: 2011
Online Access:http://ndltd.ncl.edu.tw/handle/93005122679280992460